University of Lille, IEMN
|RF IC Design Engineer and PhD Researcher
Lille, Hauts-de-France, France
Summary
Led advanced RF IC design and research for D-band Power Amplifiers, contributing to cutting-edge high-frequency wireless communication systems through comprehensive design, simulation, and validation.
Highlights
Spearheaded the design of D-band (110-170 GHz) Power Amplifiers utilizing SiGe BiCMOS B55X technology, optimizing performance for next-generation wireless communication systems.
Executed comprehensive schematic design, RF layout, and post-layout extraction, integrating advanced EM co-simulation using Cadence Virtuoso and HFSS to ensure high-fidelity circuit performance.
Supported critical tape-out activities and conducted meticulous on-wafer RF measurements, validating circuit functionality and performance against design specifications.
Developed and optimized a measurement-ready Power Amplifier testbench and validation flow, enhancing efficiency and accuracy of experimental characterization.